Siliup SP010N01GHTO

Siliup · FETs & Power MOSFETs · MPN SP010N01GHTO

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Specifications

Drain to Source Voltage100V
Current - Continuous Drain(Id)390A
Output Capacitance(Coss)1.936nF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation435W
RDS(on)1.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)15.756nF

Technical details

100V 390A 435W Surface Mount TOLL

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