Siliup SP010N01BLGHTO

Siliup · FETs & Power MOSFETs · MPN SP010N01BLGHTO

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Specifications

Gate Charge(Qg)200nC@10V
Configuration-
Drain to Source Voltage100V
Output Capacitance(Coss)2.241nF
Current - Continuous Drain(Id)350A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation370W
RDS(on)1.3mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)37pF
Number1 N-channel
Input Capacitance(Ciss)14.071nF

Technical details

100V 350A 370W Surface Mount TOLL-8

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