Siliup BSS84KDW

Siliup · FETs & Power MOSFETs · MPN BSS84KDW

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Specifications

Gate Charge(Qg)1.8nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)10pF
Current - Continuous Drain(Id)130mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation320mW
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)4.2Ω@10V;4.5Ω@4.5V
Number2 P-Channel
Input Capacitance(Ciss)30pF
TypeP-Channel

Technical details

P-Channel 60V 130mA 320mW Surface Mount SOT-363

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