Siliup 2N7002W

Siliup · FETs & Power MOSFETs · MPN 2N7002W

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Specifications

Drain to Source Voltage60V
Configuration-
Gate Charge(Qg)1.7nC@4.5V
Output Capacitance(Coss)10pF
Current - Continuous Drain(Id)300mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation300mW
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)1.7Ω@10V
Number1 N-channel
Input Capacitance(Ciss)28pF

Technical details

N-Channel 60V 300mA 300mW Surface Mount SOT-323

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