Sichainsemi · FETs & Power MOSFETs · MPN SG2M1K0170DJ
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 7.5nC |
| Drain to Source Voltage | 1.7kV |
| Current - Continuous Drain(Id) | 4.7A |
| Output Capacitance(Coss) | 8.7pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 44W |
| RDS(on) | 1.4Ω |
| Reverse Transfer Capacitance (Crss@Vds) | 1.4pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 109pF |
1.7kV 4.7A 4V 44W 1.4Ω 1 N-channel N-Channel TO-247-3L Single FETs, MOSFETs RoHS