Sichainsemi · FETs & Power MOSFETs · MPN SG2M035120LJ
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 65.5nC |
| Drain to Source Voltage | 1.2kV |
| Output Capacitance(Coss) | 102pF |
| Current - Continuous Drain(Id) | 66A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.6V |
| Pd - Power Dissipation | 268W |
| Reverse Transfer Capacitance (Crss@Vds) | 6.6pF |
| RDS(on) | 48mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.843nF |
1.2kV 66A 3.6V 268W 48mΩ 1 N-channel N-Channel TO-247-4L Single FETs, MOSFETs RoHS