Sichainsemi SG2M027120JJ

Sichainsemi · FETs & Power MOSFETs · MPN SG2M027120JJ

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Specifications

Configuration-
Gate Charge(Qg)73nC
Drain to Source Voltage1.2kV
Output Capacitance(Coss)129pF
Current - Continuous Drain(Id)90A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.6V
Pd - Power Dissipation385W
Reverse Transfer Capacitance (Crss@Vds)6.6pF
RDS(on)36mΩ
Number1 N-channel
Input Capacitance(Ciss)2.28nF

Technical details

1.2kV 90A 3.6V 385W 36mΩ 1 N-channel N-Channel TO-263-7L Single FETs, MOSFETs RoHS

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