Sichainsemi SG2M023120LJ

Sichainsemi · FETs & Power MOSFETs · MPN SG2M023120LJ

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Specifications

Drain to Source Voltage1.2kV
Gate Charge(Qg)95nC
Output Capacitance(Coss)147pF
Current - Continuous Drain(Id)97A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.6V
Pd - Power Dissipation395W
Reverse Transfer Capacitance (Crss@Vds)7.4pF
RDS(on)31mΩ
Number1 N-channel
Input Capacitance(Ciss)2.78nF
TypeN-Channel

Technical details

1.2kV 97A 3.6V 395W 31mΩ 1 N-channel N-Channel TO-247-4L Single FETs, MOSFETs RoHS

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