Sichainsemi · FETs & Power MOSFETs · MPN SG2M023120J1J
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| Gate Charge(Qg) | 95nC |
|---|---|
| Drain to Source Voltage | 1.2kV |
| Output Capacitance(Coss) | 147pF |
| Current - Continuous Drain(Id) | 107A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | 484W |
| RDS(on) | 38mΩ@15V |
| Reverse Transfer Capacitance (Crss@Vds) | 7.4pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.87nF |
| Type | N-Channel |
1.2kV 107A 2.8V 484W 38mΩ@15V 1 N-channel N-Channel TO-263-7L Single FETs, MOSFETs RoHS