Sichainsemi SG2M023120J1J

Sichainsemi · FETs & Power MOSFETs · MPN SG2M023120J1J

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Specifications

Gate Charge(Qg)95nC
Drain to Source Voltage1.2kV
Output Capacitance(Coss)147pF
Current - Continuous Drain(Id)107A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation484W
RDS(on)38mΩ@15V
Reverse Transfer Capacitance (Crss@Vds)7.4pF
Number1 N-channel
Input Capacitance(Ciss)2.87nF
TypeN-Channel

Technical details

1.2kV 107A 2.8V 484W 38mΩ@15V 1 N-channel N-Channel TO-263-7L Single FETs, MOSFETs RoHS

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