Sichainsemi · FETs & Power MOSFETs · MPN SG2M021120LH
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| Gate Charge(Qg) | 119nC |
|---|---|
| Drain to Source Voltage | 1.2kV |
| Output Capacitance(Coss) | 189pF |
| Current - Continuous Drain(Id) | 112A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | 441W |
| RDS(on) | 28mΩ@15V |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.13nF |
| Type | N-Channel |
N-Channel 1.2kV 112A 441W Through Hole TO-247-4L