Sichainsemi · FETs & Power MOSFETs · MPN SG2M020170HJ
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| Gate Charge(Qg) | 209nC |
|---|---|
| Drain to Source Voltage | 1.7kV |
| Output Capacitance(Coss) | 188pF |
| Current - Continuous Drain(Id) | 110A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.1V |
| Pd - Power Dissipation | 535W |
| RDS(on) | 28mΩ@18V |
| Reverse Transfer Capacitance (Crss@Vds) | 7.5pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.265nF |
| Type | N-Channel |
N-Channel 1.7kV 110A 535W Through Hole TO-247-4L