Sichainsemi · FETs & Power MOSFETs · MPN SG2M018120LJ
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 106nC |
| Drain to Source Voltage | 1.2kV |
| Current - Continuous Drain(Id) | 121A |
| Output Capacitance(Coss) | 186pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.6V |
| Pd - Power Dissipation | 484W |
| RDS(on) | 24mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 9.4pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.434nF |
1.2kV 121A 3.6V 484W 24mΩ 1 N-channel N-Channel TO-247-4L Single FETs, MOSFETs RoHS