Sichainsemi · FETs & Power MOSFETs · MPN SG2M014120LJ
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 211nC |
| Drain to Source Voltage | 1.2kV |
| Current - Continuous Drain(Id) | 155A |
| Output Capacitance(Coss) | 262pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.6V |
| Pd - Power Dissipation | 577W |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF |
| RDS(on) | 18mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.22nF |
1.2kV 155A 3.6V 577W 18mΩ 1 N-channel N-Channel TO-247-4L Single FETs, MOSFETs RoHS