Sichainsemi · FETs & Power MOSFETs · MPN SG2M012075HJ
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| Gate Charge(Qg) | 214nC |
|---|---|
| Drain to Source Voltage | 750V |
| Output Capacitance(Coss) | 343pF |
| Current - Continuous Drain(Id) | 160A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | 517W |
| RDS(on) | 17mΩ@18V |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.886nF |
| Type | N-Channel |
N-Channel 750V 160A 517W Through Hole TO-247-4L