Sichainsemi · FETs & Power MOSFETs · MPN SG1M160120J
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| Gate Charge(Qg) | 25.4nC |
|---|---|
| Drain to Source Voltage | 1.2kV |
| Output Capacitance(Coss) | 31pF |
| Current - Continuous Drain(Id) | 21A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | 120W |
| RDS(on) | 160mΩ@15V |
| Reverse Transfer Capacitance (Crss@Vds) | 1.4pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 617pF |
| Type | N-Channel |
N-Channel 1.2kV 21A 120W Surface Mount TO-263-7L