Sichainsemi · FETs & Power MOSFETs · MPN SG1M160120D
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 26nC |
| Drain to Source Voltage | 1.2kV |
| Current - Continuous Drain(Id) | 20A |
| Output Capacitance(Coss) | 33pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.6V |
| Pd - Power Dissipation | 122W |
| RDS(on) | 200mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 2.2pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 590pF |
1.2kV 20A 3.6V 122W 200mΩ 1 N-channel N-Channel TO-247-3L Single FETs, MOSFETs RoHS