Sichainsemi S1P05R120HBB

Sichainsemi · FETs & Power MOSFETs · MPN S1P05R120HBB

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Specifications

ConfigurationHalf-Bridge
Gate Charge(Qg)576nC
Drain to Source Voltage1.2kV
Output Capacitance(Coss)0.86pF
Current - Continuous Drain(Id)240A
Operating Temperature --40℃~+175℃
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation-
RDS(on)7mΩ@15V
Reverse Transfer Capacitance (Crss@Vds)0.06pF
Number2 N-Channel
Input Capacitance(Ciss)16.2pF

Technical details

2 N-Channel 1.2kV 240A Through Hole,62.8x56.8mm

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