Sichainsemi S1M040120H

Sichainsemi · FETs & Power MOSFETs · MPN S1M040120H

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Specifications

Gate Charge(Qg)76nC
Configuration-
Drain to Source Voltage1.2kV
Current - Continuous Drain(Id)76A
Output Capacitance(Coss)127pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation357W
RDS(on)32mΩ@18V
Reverse Transfer Capacitance (Crss@Vds)10pF
Number1 N-channel
Input Capacitance(Ciss)2.159nF

Technical details

N-Channel 1.2kV 76A 357W Through Hole TO-247-4L

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