Sichainsemi S1M040120D

Sichainsemi · FETs & Power MOSFETs · MPN S1M040120D

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Specifications

Gate Charge(Qg)76nC
Drain to Source Voltage1.2kV
Output Capacitance(Coss)127pF
Current - Continuous Drain(Id)73A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation326W
RDS(on)32mΩ@18V
Reverse Transfer Capacitance (Crss@Vds)10pF
Number1 N-channel
Input Capacitance(Ciss)2.159nF
TypeN-Channel

Technical details

N-Channel 1.2kV 73A 326W Through Hole TO-247-3L

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