Sichainsemi · FETs & Power MOSFETs · MPN S1M040120D
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| Gate Charge(Qg) | 76nC |
|---|---|
| Drain to Source Voltage | 1.2kV |
| Output Capacitance(Coss) | 127pF |
| Current - Continuous Drain(Id) | 73A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | 326W |
| RDS(on) | 32mΩ@18V |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.159nF |
| Type | N-Channel |
N-Channel 1.2kV 73A 326W Through Hole TO-247-3L