Sichainsemi · FETs & Power MOSFETs · MPN S1M007120PD
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| Drain to Source Voltage | 1.2kV |
|---|---|
| Gate Charge(Qg) | 429nC |
| Output Capacitance(Coss) | 422pF |
| Current - Continuous Drain(Id) | 253A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 833W |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF |
| RDS(on) | 7mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 10.931nF |
| Type | N-Channel |
1.2kV 253A 4V 833W 7mΩ 1 N-channel N-Channel TO-247-4L Single FETs, MOSFETs RoHS