Shikues SKQ50N03BD

Shikues · FETs & Power MOSFETs · MPN SKQ50N03BD

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)52.8nC@10V
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)252pF
RDS(on)6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.15nF

Technical details

30V 50A 2.5V 30W 6mΩ@10V 1 N-channel DFN-8-EP(3.3x3.3) Single FETs, MOSFETs RoHS

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