Shikues SKG100N12T

Shikues · FETs & Power MOSFETs · MPN SKG100N12T

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Specifications

Drain to Source Voltage120V
Gate Charge(Qg)-
Current - Continuous Drain(Id)100A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)8mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)-
Vgs±20V
TypeN-Channel

Technical details

N-Channel 120V 100A Through Hole TO-220

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