Shikues SK35P10

Shikues · FETs & Power MOSFETs · MPN SK35P10

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)90nC@10V
Current - Continuous Drain(Id)35A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation104W
Reverse Transfer Capacitance (Crss@Vds)130pF
RDS(on)55mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)6.5nF

Technical details

P-Channel 100V 35A 104W Surface Mount TO-252

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