Shikues SK359AN

Shikues · FETs & Power MOSFETs · MPN SK359AN

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)8.3nC@10V
Current - Continuous Drain(Id)3A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation-
RDS(on)65mΩ@2.5V
Reverse Transfer Capacitance (Crss@Vds)-
Number1 N-channel
Input Capacitance(Ciss)-
Vgs±12V
TypeN-Channel

Technical details

N-Channel 30V 3A Surface Mount SOT-23

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