Shikues SK30N10B-TF

Shikues · FETs & Power MOSFETs · MPN SK30N10B-TF

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)37nC@50V
Current - Continuous Drain(Id)33A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation150W
RDS(on)30mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)10pF
Number1 N-channel
Input Capacitance(Ciss)2.7nF

Technical details

N-Channel 100V 33A 150W Through Hole TO-220F

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