Shikues SK14N10-P8

Shikues · FETs & Power MOSFETs · MPN SK14N10-P8

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Specifications

Gate Charge(Qg)60nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)13.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation3.1W
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.32nF

Technical details

N-Channel 100V 13.5A 3.1W Surface Mount SOP-8

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