Shikues SK10N65B-TF

Shikues · FETs & Power MOSFETs · MPN SK10N65B-TF

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)32nC@10V
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)750mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.66nF

Technical details

N-Channel 650V 10A 45W Through Hole TO-220F

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