Shikues M28S

Shikues · Transistors (BJTs) · MPN M28S

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO20V
Emitter-Base Voltage VEBO6V
DC Current Gain1000
Pd - Power Dissipation200mW
Configuration-
Number1 PNP
typePNP
Current - Collector(Ic)1A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))550mV

Technical details

Bipolar (BJT) Transistor NPN 20V 1A 100MHz 200mW Surface Mount SOT-23

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