Shikues 2SC3356S

Shikues · Transistors (BJTs) · MPN 2SC3356S

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)7GHz
Collector - Emitter Voltage VCEO12V
Emitter-Base Voltage VEBO2.5V
DC Current Gain250
Pd - Power Dissipation200mW
Number1 NPN
typeNPN
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))-
Operating Temperature-65℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 12V 100mA 7GHz 200mW Surface Mount SOT-23

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