Shikues 2SB806

Shikues · Transistors (BJTs) · MPN 2SB806

No reviews yet — be the first to review Shikues 2SB806.

Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)75MHz
Collector - Emitter Voltage VCEO120V
Emitter-Base Voltage VEBO5V
DC Current Gain45
Pd - Power Dissipation2W
Number1 PNP
typePNP
Current - Collector(Ic)700mA
Operating Temperature-
Vce Saturation(VCE(sat))400mV

Technical details

Bipolar (BJT) Transistor PNP 120V 0.7A 75MHz 2W Surface Mount SOT-89

Related Transistors (BJTs)