Shikues 2SB1115

Shikues · Transistors (BJTs) · MPN 2SB1115

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)80MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO6V
DC Current Gain100
Pd - Power Dissipation2W
Number1 PNP
typePNP
Current - Collector(Ic)1A
Operating Temperature-
Vce Saturation(VCE(sat))200mV

Technical details

Bipolar (BJT) Transistor PNP 50V 1A 80MHz 2W Surface Mount SOT-89

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