Shenzhen ruichips Semicon RUH1H80M

Shenzhen ruichips Semicon · FETs & Power MOSFETs · MPN RUH1H80M

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)-
Output Capacitance(Coss)390pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation105W
RDS(on)11mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)11pF
Number1 N-channel
Input Capacitance(Ciss)1.85nF
TypeN-Channel

Technical details

N-Channel 100V 80A 105W Surface Mount DFN-8(5.1x5.7)

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