Shenzhen ruichips Semicon RU6888R

Shenzhen ruichips Semicon · FETs & Power MOSFETs · MPN RU6888R

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Specifications

Gate Charge(Qg)65nC@10V
Drain to Source Voltage68V
Output Capacitance(Coss)340pF
Current - Continuous Drain(Id)88A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation130W
Reverse Transfer Capacitance (Crss@Vds)200pF
RDS(on)8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.9nF
TypeN-Channel

Technical details

N-Channel 68V 88A 130W Through Hole TO-220

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