Shenzhen ruichips Semicon RU6888M

Shenzhen ruichips Semicon · FETs & Power MOSFETs · MPN RU6888M

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Specifications

Gate Charge(Qg)75nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)310pF
Current - Continuous Drain(Id)62A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation62.5W
Reverse Transfer Capacitance (Crss@Vds)110pF
RDS(on)8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.45nF
Type-

Technical details

60V 62A 62.5W Surface Mount PDFN-8(5.8x4.9)

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