Shenzhen ruichips Semicon RU60E25L

Shenzhen ruichips Semicon · FETs & Power MOSFETs · MPN RU60E25L

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Specifications

Gate Charge(Qg)55nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)285pF
Current - Continuous Drain(Id)25A
Gate Threshold Voltage (Vgs(th))2.7V
Pd - Power Dissipation50W
RDS(on)65mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.34nF

Technical details

60V 25A 50W Surface Mount TO-252

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