Shenzhen ruichips Semicon RU30P3B

Shenzhen ruichips Semicon · FETs & Power MOSFETs · MPN RU30P3B

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Specifications

Gate Charge(Qg)12nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)95pF
Current - Continuous Drain(Id)3.5A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1W
Reverse Transfer Capacitance (Crss@Vds)50pF
RDS(on)130mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)550pF

Technical details

P-Channel 30V 3.5A 1W Surface Mount SOT-23

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