Shenzhen ruichips Semicon RU30J30M

Shenzhen ruichips Semicon · FETs & Power MOSFETs · MPN RU30J30M

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Specifications

ConfigurationHalf-Bridge
Gate Charge(Qg)12nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)180pF
Current - Continuous Drain(Id)30A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation29W
Reverse Transfer Capacitance (Crss@Vds)75pF
RDS(on)12mΩ@4.5V
Number2 N-Channel
Input Capacitance(Ciss)670pF

Technical details

N-Channel Array 30V 30A 29W Surface Mount PDFN-8(4.9x5.8)

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