Shenzhen ruichips Semicon RU30120S

Shenzhen ruichips Semicon · FETs & Power MOSFETs · MPN RU30120S

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Specifications

Gate Charge(Qg)65nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)480pF
Current - Continuous Drain(Id)120A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)265pF
RDS(on)9mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)3.17nF
Type-

Technical details

N-Channel 30V 120A 150W Surface Mount TO-263

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