Shenzhen DongKe Semicon DK350G70

Shenzhen DongKe Semicon · FETs & Power MOSFETs · MPN DK350G70

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage700V
Current - Continuous Drain(Id)6A
Output Capacitance(Coss)13.7pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
TechnologyE-mode
Pd - Power Dissipation3W;2W;33W;1.1W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)249mΩ
Number1 N-channel
Input Capacitance(Ciss)-

Technical details

700V 6A 4V 249mΩ 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

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