Shanghai Prisemi Elec · FETs & Power MOSFETs · MPN PSM8N10R4L
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| Output Capacitance(Coss) | 623pF |
|---|---|
| Pd - Power Dissipation | 131.6W |
| Configuration | - |
| Drain to Source Voltage | 100V |
| Gate Charge(Qg) | 60.2nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| RDS(on) | 3.6mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.476nF |
131.6W 100V 2V 3.6mΩ@10V 1 N-channel N-Channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS