Shanghai Prisemi Elec PPMUT20V3

Shanghai Prisemi Elec · FETs & Power MOSFETs · MPN PPMUT20V3

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Specifications

Drain to Source Voltage20V
Current - Continuous Drain(Id)2.8A
Operating Temperature --40℃~+125℃
Gate Threshold Voltage (Vgs(th))450mV
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)50pF
RDS(on)110mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)460pF

Technical details

P-Channel 20V 2.8A 350mW Surface Mount SOT-323

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