Shanghai Prisemi Elec · FETs & Power MOSFETs · MPN PPMT30V4
No reviews yet — be the first to review Shanghai Prisemi Elec PPMT30V4.
| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 110pF |
| Current - Continuous Drain(Id) | 4.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.3V |
| Pd - Power Dissipation | 1.2W |
| Reverse Transfer Capacitance (Crss@Vds) | 75pF |
| RDS(on) | 60mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 950pF |
| Type | P-Channel |
P-Channel 30V 4.2A 1.2W Surface Mount SOT-23