Shanghai Prisemi Elec · FETs & Power MOSFETs · MPN PPMT30V3
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| Gate Charge(Qg) | 14nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 74pF |
| Current - Continuous Drain(Id) | 3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 1.04W |
| Reverse Transfer Capacitance (Crss@Vds) | 23pF |
| RDS(on) | 58mΩ@10V;75mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 460pF |
P-Channel 30V 3A 1.04W Surface Mount SOT-23