Shanghai Prisemi Elec PPMT30V3

Shanghai Prisemi Elec · FETs & Power MOSFETs · MPN PPMT30V3

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Specifications

Gate Charge(Qg)14nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)74pF
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation1.04W
Reverse Transfer Capacitance (Crss@Vds)23pF
RDS(on)58mΩ@10V;75mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)460pF

Technical details

P-Channel 30V 3A 1.04W Surface Mount SOT-23

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