Shanghai Prisemi Elec · FETs & Power MOSFETs · MPN PPMT2301
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| Gate Charge(Qg) | 4.3nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 89pF |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 1.1V |
| Pd - Power Dissipation | 1W |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF |
| RDS(on) | 135mΩ@2.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 550pF |
| Type | - |
20V 4A 1W Surface Mount SOT-23