Shanghai Prisemi Elec · FETs & Power MOSFETs · MPN PPMT20V4E
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| Gate Charge(Qg) | 17nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 200pF |
| Current - Continuous Drain(Id) | 4A |
| Gate Threshold Voltage (Vgs(th)) | 650mV |
| Pd - Power Dissipation | 1.4W |
| Reverse Transfer Capacitance (Crss@Vds) | 155pF |
| RDS(on) | 37mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.25nF |
20V 4A 650mV 1.4W 37mΩ@4.5V 1 P-Channel SOT-23 Single FETs, MOSFETs RoHS