Shanghai Prisemi Elec PPMT20V3

Shanghai Prisemi Elec · FETs & Power MOSFETs · MPN PPMT20V3

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage20V
Output Capacitance(Coss)125pF
Current - Continuous Drain(Id)2.8A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))900mV
Pd - Power Dissipation900mW
Reverse Transfer Capacitance (Crss@Vds)50pF
RDS(on)150mΩ@2.5V
Number1 P-Channel
Input Capacitance(Ciss)360pF
Type-

Technical details

P-Channel 20V 2.8A 900mW Surface Mount SOT-23

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