Shanghai Prisemi Elec PPMT12V4

Shanghai Prisemi Elec · FETs & Power MOSFETs · MPN PPMT12V4

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage12V
Output Capacitance(Coss)230pF
Current - Continuous Drain(Id)4.3A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.3W
Reverse Transfer Capacitance (Crss@Vds)160pF
RDS(on)-
Number1 P-Channel
Input Capacitance(Ciss)750pF
TypeP-Channel

Technical details

P-Channel 12V 4.3A 1.3W Surface Mount SOT-23

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