Shanghai Prisemi Elec PPM8PN30V25

Shanghai Prisemi Elec · FETs & Power MOSFETs · MPN PPM8PN30V25

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)25.8nC@10V
Current - Continuous Drain(Id)37A
Output Capacitance(Coss)170pF
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation35.6W
RDS(on)11mΩ@10V;15mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)146pF
Number1 P-Channel
Input Capacitance(Ciss)1.207nF
TypeP-Channel

Technical details

P-Channel Surface Mount PDFN-8L

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