Shanghai Prisemi Elec · FETs & Power MOSFETs · MPN PPM6N30V9
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| Gate Charge(Qg) | 13.8nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 150pF |
| Current - Continuous Drain(Id) | 9A |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 2.4W |
| Reverse Transfer Capacitance (Crss@Vds) | 98pF |
| RDS(on) | 21mΩ@4.5V;28mΩ@2.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 780pF |
30V 9A 1V 2.4W 1 P-Channel UDFN-6(2x2) Single FETs, MOSFETs RoHS