Shanghai Prisemi Elec · FETs & Power MOSFETs · MPN PPM6N20V10
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| Gate Charge(Qg) | 17.5nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 224pF |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Pd - Power Dissipation | 2.4W |
| Reverse Transfer Capacitance (Crss@Vds) | 210pF |
| RDS(on) | 15mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.9nF |
20V 10A 900mV 2.4W 15mΩ@4.5V 1 P-Channel DFN2x2-6L Single FETs, MOSFETs RoHS